http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10037927-B2

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publicationDate 2018-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10037927-B2
titleOfInvention Semiconductor structure, testing and fabricating method thereof
abstract A method of fabricating a semiconductor structure includes forming first and second features in a scribe region of a semiconductor substrate in which the first and second features are electrically isolated from each other; forming an interlayer dielectric layer over the first and second features; and forming a first contact in the interlayer dielectric layer and connected to the first feature and a second contact in the interlayer dielectric layer and connected to the second feature.
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Total number of triples: 31.