| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4af0df9a26ff4aafde7285cbd8eb12f4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18394
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18313
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18347
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02288
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02253
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3432 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18361
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18311 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-022 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 |
| filingDate |
2015-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c4a1eebf5deeb6bec3a4475c6ff25447
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88b7ca030253c814e0aaef4527d92742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73fde0dd135954e402bde0e5b406845c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8f2142fc69d307fdf492432d055596e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81decf108d40c80192dd6e91b5ab59ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_050051cc014ff42277552a9ca8347a65 |
| publicationDate |
2018-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10033157-B2 |
| titleOfInvention |
Surface-emitting semiconductor laser, method for producing the same, surface-emitting semiconductor laser device, optical transmission device, and information processing device |
| abstract |
A surface-emitting semiconductor laser includes a first semiconductor multilayer film reflector, an active region, a second semiconductor multilayer film reflector, and a current confinement layer including an oxidized region formed by selective oxidation. The current confinement layer includes a first semiconductor layer having a relatively high Al content, a second semiconductor layer that is adjacent to the first semiconductor layer on an active-region side of the first semiconductor layer and has a lower Al content than the first semiconductor layer, and a composition-gradient layer adjacent to the first semiconductor layer on a side of the first semiconductor layer which is opposite to the active-region side. A portion of the composition-gradient layer which faces the first semiconductor layer has a lower Al content than the first semiconductor layer. |
| priorityDate |
2014-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |