| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1052
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B99-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1207 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 |
| filingDate |
2017-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e0f392d18106711c48edd6afb616c73
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00493c8d5b956f1a1dbffaf60e57a6c7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5563e68c7c10017c83fb15b655a22d87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec50f1cc0b4e505fce1a66f3cbc73c55
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be3eb36ba811a75e30f93199fbcea57b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f3edd808a38c8eb882cbbcb19bdd830 |
| publicationDate |
2018-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10032918-B2 |
| titleOfInvention |
Semiconductor device and method for manufacturing the same |
| abstract |
A highly reliable semiconductor device is provided. The semiconductor device includes a first barrier insulating film; a first gate electrode thereover; a first gate insulating film thereover; an oxide semiconductor film thereover; source and drain electrodes over the oxide semiconductor film; a second gate insulating film over the oxide semiconductor film; a second gate electrode over the second gate insulating film; a second barrier insulating film that covers the oxide semiconductor film, the source and the drain electrodes, and the second gate electrode, and is in contact with side surfaces of the oxide semiconductor film and the source and drain electrodes; and a third barrier insulating film thereover. The first to third barrier insulating films are less likely to transmit hydrogen, water, and oxygen than the first and second gate insulating films. The third barrier insulating film is thinner than the second barrier insulating film. The source and drain electrodes each includes a conductive oxide film in contact with the oxide semiconductor film. The conductive oxide film has more oxygen vacancies than the oxide semiconductor film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11158638-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11257960-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11355530-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11424369-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11211467-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11205664-B2 |
| priorityDate |
2016-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |