http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10023976-B2

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filingDate 2017-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3da34c34397dd88fb2febfd83ce93f2b
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publicationDate 2018-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10023976-B2
titleOfInvention Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals
abstract A periodic table Group 13 metal nitride crystals grown with a non-polar or semi-polar principal surface have numerous stacking faults. The purpose of the present invention is to provide a period table Group 13 metal nitride crystal wherein the occurrence of stacking faults of this kind are suppressed. The present invention achieves the foregoing by a periodic table Group 13 metal nitride crystal being characterized in that, in a Qx direction intensity profile that includes a maximum intensity and is derived from an isointensity contour plot obtained by x-ray reciprocal lattice mapping of (100) plane of the periodic table Group 13 metal nitride crystal, a Qx width at 1/300th of peak intensity is 6×10−4 rlu or less.
priorityDate 2012-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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