| abstract |
According to one embodiment, a thin-film transistor includes a polycrystalline semiconductor layer, a gate electrode opposing the polycrystalline semiconductor layer, a gate insulating film provided between the gate electrode and the polycrystalline semiconductor layer and in contact with the gate electrode, and an amorphous layer provided between the gate insulating film and the polycrystalline semiconductor layer, and in contact with the gate insulating film and the polycrystalline semiconductor layer. |