| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-872
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66212 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02639
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-183 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B32B3-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40 |
| filingDate |
2015-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2018-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd199a013f40f17382e5a2a0b90138ea
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82c179d28d80741fd77d1f6b7c46ebc1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9dc841f3fc93ea98245ba21eabd18a03 |
| publicationDate |
2018-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10006147-B2 |
| titleOfInvention |
Gallium nitride substrate |
| abstract |
There is provided a gallium nitride substrate having a C plane as a surface with a diameter of not less than 100 mm, the gallium nitride substrate including first regions and second regions having different average values of band-edge emission intensities in a micro photoluminescence mapping at 25° C. in a square region located in the C plane and having sides each having a length of 2 mm, an average value Ibe1a of the band-edge emission intensities of the first regions and an average value Ibe2a of the band-edge emission intensities of the second regions satisfying the following relational expressions (I) and (II):n n Ibe 1 a>Ibe 2 a (I)n nandn n2.1≤ Ibe 1 a/Ibe 2 a ≤9.4 (II). |
| priorityDate |
2014-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |