http://rdf.ncbi.nlm.nih.gov/pubchem/patent/UA-92968-C2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3d202d5dd19b242d9c1cb0c56f433249 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N21-00 |
| filingDate | 2009-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ea2b1f7ea8b6ed98c5532fed9753e64f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d9a1124aa25a21590caebe3130381f33 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d43d97d970bd4244b60e913276c9adb8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca49c32689b05e93d5e13288f7f6d4de |
| publicationDate | 2010-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | UA-92968-C2 |
| titleOfInvention | METHOD OF OBTAINING A GAS SENSOR |
| abstract | The invention relates to means of analyzing gases and gas mixtures, in particular to semiconductor gas sensors. The method of obtaining a gas sensor involves the electrochemical etching of single crystalline silicon material, the creation of a protective layer, the manufacture of metal contacts and the connection of terminals for electrical measurements. The etching of a single-crystal n- or p-type silicon wafer is carried out by electrochemical anodizing in a fluoroplastic cell, using a CHOH: HF solution at a concentration of 1: 1 or CHOH: HF: HO at a concentration of 1: 1: 1 at an anode current density of 10-60 mA / cm, for 10-30 minutes, after which it is washed in deionized water and dried in vacuum for 30 min, then make metal contacts by vacuum thermal spraying of metals Cu or Al, or Ag, passivate the resulting surface of porous silicon by electrochemical deposition of an electrically conductive field measuring film polyepoxypropylcarbazole at a speed of unfolding potential of 80 mV / s in the range of change of voltage from 0.4 to 1 V and the range of change of current from 0.8 to 1.5 mA, or vacuum thermal sputtering of a palladium metal film with a thickness of 100 nm. The n-type silicon wafer is further irradiated with a light flux of 18000-20000 lm visible wavelength range during the entire etching process. The invention provides a simplification of gas sensor manufacturing technology. [The invention relates to means of analyzing gases and gas mixtures, in particular to gas semiconductors sensors. The method of obtaining a gas sensor includes the electrochemical etching of single crystalline silicon material, the creation of a protective layer, the manufacture of meta |
| priorityDate | 2009-05-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.