http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-M327083-U
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_12be64ba05e1903129f135be79a9f2e5 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-00 |
filingDate | 2007-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ab7f8ca9cd6ed7a27b93cb9f8cb3de6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6dca9e61e72ef2f638b207fa9d5db4d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a67c423ead53d4bbcb78b9dd357ceb0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb7fb950b6731f05e3c8bfd50b7dc973 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1e729d03210f05bd15a6fee260192f96 |
publicationDate | 2008-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-M327083-U |
titleOfInvention | Thin film solar-cell with multi levels of microcrystalline silicon |
abstract | The present invention discloses a thin film solar cell with multi levels of microcrystalline silicon. It mainly comprises a substrate; a first transparent conduction film; a plurality of p-type semiconductor layers; a plurality of intrinsic semiconductor layers; a plurality of n-type semiconductor layers; a second transparent conduction oxide and a top electrode. The multi levels are formed by stacking the p-type semiconductor layer, the intrinsic semiconductor layer and the of n-type semiconductor layer in order. The multi levels of the present solar cell are used to improve the optical-electronic conversion of solar cell. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I511309-B |
priorityDate | 2007-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.