http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I767046-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B2203-005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02024 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B3-08 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2018-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d77730976ae7e173ba48e3f775f81f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f10598a18271581df8a38b1a29982a1 |
| publicationDate | 2022-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I767046-B |
| titleOfInvention | Evaluation method of silicon wafer and manufacturing method of silicon wafer |
| abstract | The present invention provides a method for evaluating silicon wafers, which comprises a step of measuring front surface defects of the silicon wafers in advance, and repeating the oxidation treatment by ozone water and the incomplete removal of the silicon wafers alternately. The cleaning step of the oxide film removal treatment with hydrofluoric acid under the condition of the oxide film formed on the surface of the silicon wafer, and the surface defect measurement of the silicon wafer after the cleaning step to compare the previous An additional defect measurement step in which an increase in defects due to the defects measured in the surface defect measurement step is measured, wherein the cleaning step and the additional defect measurement step are alternately repeated a plurality of times, based on the additional defects after each cleaning step measurement results to evaluate the silicon wafer. |
| priorityDate | 2017-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.