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filingDate 2021-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2022-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I765765-B
titleOfInvention Semiconductor device including superlattice with oxygen and carbon monolayers and associated methods
abstract A semiconductor device may include a semiconductor layer and a superlattice adjacent the semiconductor layer. The superlattice may include stacked groups of layers, with each group of layers comprising stacked base semiconductor monolayers defining a base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The at least one non-semiconductor monolayer in a first group of layers of the superlattice may comprise oxygen and be devoid of carbon, and the at least one non-semiconductor monolayer in a second group of layers of the superlattice may comprise carbon.
priorityDate 2020-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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