| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_11d738aa9b5b691f2f5094e7b819ac93 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30617
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2020-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_00f682a55885285bb33f533ed489ba0d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9b20cab23493631f907ca80266e7e38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21c2aacb9794ebb1ee6160a949992109 |
| publicationDate |
2021-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I748369-B |
| titleOfInvention |
Etching solution and method for aluminum nitride |
| abstract |
Described herein are etching solutions and method of using the etching solutions suitable for etching aluminum nitride (AlN) from a semiconductor substrate during the manufacture of a semiconductor device comprising AlN and silicon material without harming the silicon material. The etching solution comprises a cationic surfactant, water, a base, and a water-miscible organic solvent. |
| priorityDate |
2019-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |