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filingDate 2020-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2021-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I747283-B
titleOfInvention Method and system for semiconductor structure thickness measurement
abstract A method for thickness detection in a semiconductor structure includes detecting tilt of a stacked image of layers in the semiconductor structure by at least one processor. The method further includes performing rough boundary line detection on the stacked layers in the image by the at least one processor. The method may further include performing fine thickness detection on the stacked layers in the image by the at least one processor. The rough boundary line detection may detect the boundary of the layers of the stack with a first precision, and the fine thickness detection may detect the thickness of the layers of the stack with a second precision higher than the first precision. The method may additionally include providing an output result of the fine thickness detection by the at least one processor.
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