| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate |
2019-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e55ccaf24a1d5d248ab4fa6da8f7d732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0f3b80d0af3df035dbb988a6960d146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44035462eb87dd4a70aaeb86a2845852 |
| publicationDate |
2021-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I745789-B |
| titleOfInvention |
Semiconductor device and method of manufacturing the same |
| abstract |
A semiconductor device and method for forming the semiconductor device are provided. A first layer is formed over a semiconductor layer, and a first patterned mask is formed over the first layer. A cyclic etch process is then performed to define a second patterned mask in the first layer. The cyclic etch process includes a first phase to form a polymer layer over the first patterned mask and a second phase to remove the polymer layer and to remove a portion of the first layer. A portion of the semiconductor layer is removed using the second patterned mask to define a fin from the semiconductor layer. |
| priorityDate |
2018-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |