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filingDate 2017-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90cde7fc84b171954b53d599d415c8be
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publicationDate 2021-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I742092-B
titleOfInvention Lanthanide, yttrium and scandium precursors for ald, cvd and thin film doping and methods of use
abstract Methods for depositing a film comprising exposing a substrate surface to a metal precursor and a co-reactant to form a metal containing film are described. The metal precursor comprises a metal atom and an allyl ligand, the metal atom comprises one or more lanthanide
priorityDate 2016-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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