| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_356068227e13eed6ff524f07808e0bf7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-44 |
| filingDate |
2020-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25f01fe3350196aba1c52d54673ee0db
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6bd9e75853486621c4abaca76555701c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07a732567d6652ef148223ab4e91091b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_939e18b4f3a83f587d4869f664d4e2cd |
| publicationDate |
2021-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I740368-B |
| titleOfInvention |
Composition for etching a silicon nitride layer |
| abstract |
The present invention relates to a composition for etching a silicon nitride film. The composition includes an inorganic acid, an epoxy-type silicon compound, and water. The composition of the present invention has the ability to damage the underlying metal film and the silicon oxide film. The effect of selective removal of the silicon nitride film while minimizing the etching. |
| priorityDate |
2019-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |