http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I738942-B
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_748b3b613e1a2e2b8a4d1becb44ca194 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-023 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-18 |
filingDate | 2017-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2021-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bce50ada956952276719c4bc9cefde3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c57748818802b2ac4f5cb70c1c21ff1e |
publicationDate | 2021-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-I738942-B |
titleOfInvention | Correlated electron material devices and methods of constructing the same |
abstract | Subject matter disclosed herein may relate to forming a nucleation layer in connection with fabrication of correlated electron materials used, for example, to perform, for example, a switching function. In embodiments, processes are described in which a metallic precursor in a gaseous form is utilized to deposit a transition metal, for example, on a conductive substrate comprising a noble metal. The conductive substrate may be exposed to a reducing agent, which may operate to convert ligands of the metallic precursor to a gaseous form. A remaining metallic portion of the precursor deposited on the noble metal may allow a CEM film to be grown over the conductive substrate. |
priorityDate | 2016-12-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 65.