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filingDate 2019-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6174edd6bd3d9573eef76d1991cba45
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publicationDate 2021-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I738053-B
titleOfInvention Cleaning method, manufacturing method of semiconductor device, substrate processing device and recording medium
abstract After cleaning the processing container in the present invention, subsequent substrate processing can be performed without reducing productivity.nClean the inside of the processing container by performing the following steps: (a) Supply and exhaust the first gas containing fluorine-based gas at the first flow rate into the processing container set to the first temperature after the substrate has been processed Gas, the step of removing substances adhering to the processing container; (b) Set the second temperature higher than the first temperature after (a) to the processing container at a higher flow rate than the first flow rate and the third flow rate Each of them is a step of supplying a second gas that does not chemically react with fluorine at the second temperature and exhausting the second gas at a high second flow rate to physically detach and remove the residual fluorine in the processing container; and (c) A third gas that chemically reacts with fluorine at the third temperature is supplied at a third flow rate into a processing container set to a third temperature higher than the first temperature after (a), and the processing is performed The step of chemically detaching and removing the residual fluorine in the container.
priorityDate 2018-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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