| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e8a6651993e6843716eddaa372f851e2 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0091 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2017-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_808f498f07ad7b82a1257fb5fef24888
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8371eb428e1bd390f44a217e8365ca64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c2a25749cadb138f43dc72869f976dc2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1beaf764dad03c6e27cc8817bca107a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d939d2c4520bd38111154c446a05b14e |
| publicationDate |
2021-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I737826-B |
| titleOfInvention |
Manufacturing method of semiconductor light emitting element |
| abstract |
The semiconductor light emitting element 10 of the present invention is provided with a light extraction layer (substrate 22) having a light extraction surface (main surface 22b). The light extraction layer has: a plurality of tapered portions 52 formed in an array on the light extraction surface; and a plurality of granular portions 56 formed on the side surface of the tapered portion 52 and adjacent tapered portions 52 Both sides of the flat part of the valley. The method of manufacturing the semiconductor light-emitting element 10 includes a step of forming a mask having an array pattern on the light extraction layer; and a step of etching the mask and the light extraction layer from the mask. The etching step includes: a first dry etching step, which is to perform dry etching until the entire mask is removed; and a second dry etching step, which is to further dry-etch the light extraction layer after removing the mask. |
| priorityDate |
2016-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |