| abstract |
A gas detection device is produced by semiconductor process and includes a substrate, a microelectromechanical element, a light emitting element, a particle sensing element, a gas sensing element, a driving chip element and a packaging layer. The driving chip element controls the microelectromechanical element, the light emitting element, the particle sensing element and the gas sensing element to be driven, respectively, and makes the microelectromechanical element actuated and transport the gas. The gas can be introduced into the gas detection device through a gas inlet of the substrate. Light spots of the gas are formed due to the scattered light source of the light emitting element, and are received by the particle sensing element to generate a detection data information of particle. The gas sensing element detects the gas passing through and generates a detection data information of gas. Finally, the gas is discharged from the packaging layer. |