http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I732952-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bc80a81e7cbcd197c93809a1a7770a95 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate | 2017-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5620ffefc509da1fc9366e109421514 |
| publicationDate | 2021-07-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I732952-B |
| titleOfInvention | A chemical mechanical polishing slurry for silicon nitride with a high selectivity |
| abstract | The invention relates to a chemical mechanical polishing slurry for silicon nitride with a high selectivity. The polishing slurry comprises water, abrasive particle, heterocyclic compounds with one or more carboxy groups, compounds of poly(amic acid) and alkanolamine, pH conditioning agent and bactericide. The chemical mechanical polishing slurry of the invention can increase the polishing removal rate selectivity of silicon nitride/ silicon dioxide and silicon nitride/ polysilicon.. Meanwhile, it also can highly increase the polishing removal rate of silicon nitride and decrease the polishing removal rate of silicon dioxide and polysilicon. Therefore, the chemical mechanical polishing slurry has a good market application prospect. |
| priorityDate | 2016-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 82.