| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate |
2019-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f656b3389fee642ac1b129c5cd9ef01b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6308c655ba228565b661b612b41d649d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8823b34711ec28d32b20bd151fd46fb3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23fa917aeee726b7d45cfa66b9b01b42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a718c303eace633e772cee37c3f927ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_243d33a9860ca42e8712b8b20355f695
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ae1f2833b7ddfd372893749a9f2d85e |
| publicationDate |
2021-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I731445-B |
| titleOfInvention |
Pattern formation method and method for manufacturing a semiconductor device |
| abstract |
In a pattern formation method, a photo resist pattern is formed over a target layer to be patterned. An extension material layer is formed on the photo resist pattern. The target layer is patterned by using at least the extension material layer as an etching mask. |
| priorityDate |
2018-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |