| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-26586 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823864
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 |
| filingDate |
2017-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a86d824a8846feb7d02435f22f1e025f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_905a8b0d1d74ca01a9293d99aad7a0be
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6aed4e851781774eebb69f00d5ca1d56 |
| publicationDate |
2021-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I730165-B |
| titleOfInvention |
Semiconductor structure and method of fabricating the same |
| abstract |
A method of fabricating a semiconductor structure is provided. The method includes forming a sacrificial gate structure, depositing a dielectric material and implanting the dielectric material using a silicon cluster gas. The silicon cluster gas has two or more silicon atoms. |
| priorityDate |
2016-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |