http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I729538-B

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filingDate 2019-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d72aef6e4565895817322191fc0edb8
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publicationDate 2021-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I729538-B
titleOfInvention Silicon carbide semiconductor element integrated with clamping voltage clamping circuit
abstract The present invention provides a silicon carbide semiconductor device that integrates a metal oxide semiconductor field effect transistor (MOSFET) and a bidirectional voltage clamp. The simple structure mentioned above achieves the purpose of protecting the device and effectively avoids the forward overvoltage between the gate and the source. And negative overvoltage may cause component damage.
priorityDate 2018-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 28.