| abstract |
The present invention provides a uniform silicon carbide crystal preparation device. The uniform silicon carbide crystal preparation device can include a cylinder, a doped ingot, and a flat plate, so that the supply of dopants can be stabilized and controlled. This accessory does not participate in the growth cavity It reacts, but maintains its effect during the growth process, and finally a semi-insulating silicon carbide single crystal with uniform electrical properties can be obtained. |