http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I723302-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2018-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_457726ea32fdd52528fe9ceab2427536 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ec8768af0c398a4dfbab209433ad01f4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e07051022ff1e5f4d0e393247ed1b91f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_293ba18ae7374986a341e0377a570434 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d0f6b5672cc71e4c15c6969d70c3429 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6789cb3e50e5b75804247e087e9f0804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f89831fb0c890397b9fa21867e03cfdc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c709991ce437a25e1671f9b2f5fbc5e9 |
| publicationDate | 2021-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I723302-B |
| titleOfInvention | Semiconductor structures and method forming same |
| abstract | The present disclosure describes various non-planar semiconductor ndevices, such as fin field-effect transistors (finFETs) to provide an example, having one or more metal rail conductors and various methods for fabricating these non-planar semiconductor devices. In some situations, the one or more metal rail conductors can be electrically connected to gate, source, and/or drain regions of these various non-planar semiconductor devices. In these situations, the one or more metal rail conductors can be utilized to electrically connect the gate, the nsource, and/or the drain regions of various non-planar semiconductor devices to other gate, source, and/or drain regions of various non-planar semiconductor devices and/or other semiconductor devices. However, in other situations, the one or more metal rail conductors can be isolated from the gate, the source, and/or the drain regions of these various non-planar semiconductor devices. This isolation prevents electrical connection between the one or more metal rail conductors and the gate, the source, and/or the drain regions of these various non-planar semiconductor devices. |
| priorityDate | 2017-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.