patent/TW-I723139-B

http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I723139-B

Outgoing Links

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filingDate	2017-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate	2021-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor	http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25bbfb8c0b2a5cca598af3c89eef52e0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_748f7f35a80ac5a49a6fc3daf9774ed6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cbf80f3b6fae3e5a9441f77e29cdffea
publicationDate	2021-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber	TW-I723139-B
titleOfInvention	Fet including an ingaas channel and method of enhancing performance of the fet
abstract	According to an embodiment of the present inventive concept, a method of manufacturing a FET device having a set BTBT leakage and a maximum V DD nincludes: determining an x value in In x nGa 1-x nAs according to the BTBT leakage and the maximum V DD n, and forming a channel utilizing In x nGa 1-x nAs, wherein x is not 0.53.
priorityDate	2016-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type	http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate	Subject
isDiscussedBy	http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419557764 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID31170

Total number of triples: 47.