| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_58054227722081749d7e8e121924a5c8 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-486
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76801 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate |
2020-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3510da4484de75457a9a66b4ab0c5886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d554f33fbd016af2fd00e9081e545153 |
| publicationDate |
2021-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I722754-B |
| titleOfInvention |
Manufacturing method of semiconductor device |
| abstract |
The manufacturing method of the semiconductor device of the embodiment includes the following steps: forming a first insulating film with good covering properties in a through hole of a semiconductor substrate and a first surface side, the semiconductor substrate having a first surface and a side opposite to the first surface The second surface is provided with a circuit board containing a wiring circuit on the second surface side, and has a through hole from the first surface to the second surface; the second insulation film is formed in the through hole and the first surface side is poorly covered. Film; and by anisotropic etching to remove the first insulating film at the bottom of the through hole, or the first insulating film at the bottom of the through hole and the second insulating film at the bottom of the through hole. |
| priorityDate |
2019-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |