Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b5231c81de1a546c1d6a9325c10910ce |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-452 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28587 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4175 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-535 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28581 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 |
filingDate |
2019-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2021-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abc0c2426936457b5419a63f85ce08a3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3dc557edbdadaa3d23342443ef9cf9d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6842c2bc13aa94276c0fc8e8d191550 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_544365f3de1d4b384bc0759d73d19d47 |
publicationDate |
2021-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-I721492-B |
titleOfInvention |
Nitride structures having low capacitance gate contacts integrated with copper damascene structures |
abstract |
A semiconductor structure having: a first dielectric disposed in direct contact with a Group III-N semiconductor; a second dielectric disposed over the first dielectric, the first dielectric having a higher dielectric constant than the second dielectric; a third dielectric layer disposed on the first dielectric layer, such third dielectric layer having sidewall abutting sides of the second dielectric layer; and a gate electrode contact structure. The gate electrode structure comprises: stem portion passing through, and in contact with, the first dielectric and the second dielectric having bottom in contact with the Group III-V semiconductor; and, an upper, horizontal portion extending beyond the stem portion and abutting sides of the third dielectric layer. An electrical interconnect structure has side portions passing through and in contact with the third dielectric layer and has a bottom portion in contact with the horizontal portion of the gate electrode contact structure. |
priorityDate |
2018-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |