abstract |
A light-emitting device is disclosed. The light-emitting device comprises a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active layer formed therebetween; a surrounding exposed region formed on peripheral of the semiconductor stack, exposing a surface of the first semiconductor layer; a conductive layer formed on the second semiconductor layer, including a first conductive extending region extending toward and contacting the surface in the surrounding exposed region; an electrode layer formed on the surrounding exposed region, surrounding the semiconductor stack, contacting the conductive layer and including an electrode pad not overlapping the semiconductor stack; an outer insulator covering one portion of the conductive layer and the electrode layer, including a first opening exposing the other portion of the conductive layer; a bonding layer covering the outer insulator and electrically connecting the other portion of the conductive layer through the first opening; and a conductive substrate, wherein the semiconductor stack is located on one side of the bonding layer, and the conductive substrate is located on an opposite side of the bonding layer. |