| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30621 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2017-04-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_71433337fffc76a7c5fd06712e09d6a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46c1f83f4e3a0aabbbdaaa4f98bfc51d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58dd4cdff773e21b76cfca013521be26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d949c5f5d76abfb09c459b47f40854d |
| publicationDate |
2021-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I719198-B |
| titleOfInvention |
Methods for chemical etching of silicon |
| abstract |
Improved methods for chemically etching silicon are provided herein. In some embodiments, a method of etching a silicon material includes: (a) exposing the silicon material to a halogen-containing gas; (b) evacuating the halogen-containing gas from the semiconductor processing chamber; (c) exposing the silicon material to an amine vapor to etch a monolayer of the silicon material; (d) evacuating the amine vapor from the semiconductor processing chamber and; (e) optionally repeating (a)-(d) to etch the silicon material to a predetermined thickness. |
| priorityDate |
2016-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |