http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I717068-B

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filingDate 2019-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c78989c00427ad63a6e445a1f5a28940
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publicationDate 2021-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I717068-B
titleOfInvention Integrated circuit and method manufacturing the same
abstract Various embodiments of the present disclosure are directed towards an nintegrated circuit (IC) including a first through substrate via (TSV) within a first semiconductor substrate. The first semiconductor substrate has a front-side surface and a back-side surface respectively on opposite sides of the first semiconductor substrate. The first semiconductor substrate includes a first doped channel region extending from the front-side surface to the back-side surface. The first through substrate via (TSV) is defined at least by the first doped channel region. A first interconnect structure is on the front-side surface of the first semiconductor substrate. The first interconnect structure includes a nplurality of first conductive wires and a plurality of first conductive vias, and the first conductive wires and the first conductive vias define a conductive path to the first TSV.
priorityDate 2018-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 47.