http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I716090-B

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filingDate 2019-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b5348febae939fde53eadb9dfc9ed76
publicationDate 2021-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I716090-B
titleOfInvention Method for determining oxygen or carbon in semiconductor material
abstract A method for determining the content of oxygen or carbon in semiconductor material by gas fusion analysis comprisingncleaning a crucible and a test sample of the semiconductor material by inductively heating the test sample in the crucible to a temperature of not less than 1300 °C in a stream having a composition of nitrogen or a mixture of nitrogen and at least one rare gas; andndetermining the content of oxygen or carbon in the test sample of semiconductor material in a measuring chamber (2) of a measuring device (100), comprising inductively heating in the measuring chamber (2) the test sample in a gas stream having said composition and melting the test sample in the crucible (1); reacting oxygen contained in the test sample with carbon or reacting carbon contained in the test sample with oxygen to form at least one oxidation product; and determining the amount of the at least one oxidation product and using the amount of the at least one oxidation product as a measure of the content of oxygen or carbon contained in the test sample.
priorityDate 2018-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 26.