http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I715972-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fb272959740a2231f287ac6bf4d190a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67253 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-683 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67109 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4584 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67011 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45504 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45578 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02263 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-301 |
| filingDate | 2019-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d80a69369af41e5cc3fb9a64426ce2da http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d286119d8b06829f33127c7817ba4cde |
| publicationDate | 2021-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I715972-B |
| titleOfInvention | Substrate processing device, semiconductor device manufacturing method and recording medium |
| abstract | The subject of the present invention is to suppress variations in film thickness of the film formed on the substrate. The substrate processing apparatus of the present invention includes: a tube member that forms a cylindrical processing chamber; and a partition member, in which a plurality of parts are arranged in a circumferential direction on the outer peripheral surface side of the tube member, and are partitioned to communicate with the processing chamber through a supply hole Supply chamber; a gas nozzle, each of which is provided with one or more supply chambers, extends in the axial direction, and is formed on the side with injection holes that spray the processing gas flowing inside the processing chamber through the supply holes; And a gas supply pipe, which connects a plurality of gas nozzles with corresponding gas supply sources respectively. The supply chamber includes a first nozzle chamber and a second nozzle chamber. The processing gas includes a raw material gas, and a gas nozzle for flowing the raw material gas and a gas nozzle for flowing other processing gases are arranged in the second nozzle chamber. |
| priorityDate | 2018-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.