| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-511
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66803
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate |
2018-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca8be91223a4d492826b8724fcd081cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_065ea28ce1af429fae05f1aecde02e9c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8eb0295f4fcf30cd757040cf51d7e334
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ad3a55024e855cf174973f70b3ae44d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36fcc1e23d4b8c0563fcd55776a8e4fc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ced4a4ea8409bf35ccb57ed9d40e22f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c9b5034378b92ab568b7915a56b059c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e34da02d8d81a61005d0fdeaf6ce37e0 |
| publicationDate |
2020-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I713152-B |
| titleOfInvention |
Semiconductor devices and methods for forming the same |
| abstract |
Generally, the present disclosure provides example embodiments relating to tuning threshold voltages in transistor devices and the transistor devices formed thereby. Various examples implementing various mechanisms for tuning threshold voltages are described. In an example method, a gate dielectric layer is deposited over an active area in a device region of a substrate. A dipole layer is deposited over the gate dielectric layer in the device region. A dipole dopant species is diffused from the dipole layer into the gate dielectric layer in the device region. |
| priorityDate |
2018-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |