| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2016-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_647b374219e9ff312de41a213946f024
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_510d67c1526ee2b67e32208595b728a1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f958d25cf9931c2022598156a5b8d3d |
| publicationDate |
2020-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I712084-B |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
A manufacturing method of a semiconductor device includes the following steps. A barrier layer is formed on a first region and a second region of a semiconductor substrate. The barrier layer formed on the first region is thinned before a step of forming a first work function layer on the barrier layer. The first work function layer formed on the first region is then removed. The process of thinning the barrier layer on the first region and the process of removing the first work function layer on the first region are performed separately for ensuring the coverage of the first work function layer on the second region. The electrical performance of the semiconductor device and the uniformity of the electrical performance of the semiconductor device may be improved accordingly. |
| priorityDate |
2016-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |