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filingDate 2019-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2020-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I711117-B
titleOfInvention Heterojunction bipolar transistors and method of forming the same
abstract Device structures and fabrication methods for heterojunction bipolar transistors. Trench isolation regions are arranged to surround a plurality of active regions, and a collector is located in each of the active regions. A base layer includes a plurality of first sections that are respectively arranged over the active regions and a plurality of second sections that are respectively arranged over the trench isolation regions. The first sections of the base layer contain single-crystal semiconductor material, and the second sections of the base layer contain polycrystalline semiconductor material. The second sections of the base layer are spaced in a vertical direction from the trench isolation regions to define a plurality of cavities. A plurality of emitter fingers are respectively arranged on the first sections of the base layer.
priorityDate 2018-06-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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