http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I710765-B

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fbd8be874a492eeb58f2958fe1b2fa9a
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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-121
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B05D1-18
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filingDate 2019-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ef7dbeb7198eb1df134a37f59c81d95d
publicationDate 2020-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I710765-B
titleOfInvention Humidity sensor and manufacturing method thereof
abstract The invention provides a humidity sensor and a method of manufacturing the same. The humidity sensor comprises a substrate, an electrode layer, a semiconductor layer and a humidity sensing layer. The electrode layer is disposed on the substrate. The semiconductor layer is on the electrode layer. The humidity sensing layer is located on the semiconductor layer, wherein the humidity sensing layer is composed of the structure of the formula (I):n (I),n In which R is a linear or branched C3 to C20 alkyl group, and X is a single-stranded deoxyribonucleic acid (ssDNA).
priorityDate 2019-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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