Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a3bb4ae410da4be8184239adc5ab1c0 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76823 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32051 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32055 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4404 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7685 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45536 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-04 |
filingDate |
2017-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2020-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c784d6a3034739641f0b986de15311b1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_648b2c866d95dfa043c2c34fdeea3a6c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4549282d410f48ae3859412866f7b796 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e67cf92e20bcb3754c6eeb527889e78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44b3dd9b1d61f4c34c4472de2539c274 |
publicationDate |
2020-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-I709655-B |
titleOfInvention |
Selective deposition of metallic films |
abstract |
Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved. |
priorityDate |
2016-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |