http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I709212-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-488 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-492 |
| filingDate | 2019-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_317d8b1c933dc610b802308196fcd540 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c893a6b8c44fc11e872494ab33208a7b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa972ad6e2c1a6ea3675d7b9fe587533 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2145d196d5853d75f99a4c03bfc1c0e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91c356285b5910d717e2099a3779b5e5 |
| publicationDate | 2020-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I709212-B |
| titleOfInvention | Wafer bonding structure and method of forming the same |
| abstract | A wafer bonding structure and a method of forming the same are provided. The method includes forming a first wafer and bonding a second wafer to the bonding dielectric layer and the bonding pad of the first wafer. Forming the first wafer includes the following processes. A semiconductor structure is provided. The semiconductor structure has a first roll off region on the edge thereof. An additional dielectric layer is formed to fill the first roll off region. A bonding dielectric layer having an opening is formed on the semiconductor structure and the additional dielectric layer. A conductive layer is formed on the bonding dielectric layer and filled in the opening, wherein the conductive layer over the additional dielectric layer has a protrusion. A removal process is performed to remove the conductive layer on the bonding dielectric layer. The conductive layer remained in the opening form a bonding pad. The removal process includes a planarization process, and the protrusion is removed by the planarization process. |
| priorityDate | 2019-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.