http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I708393-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3c754156d9ab873a2efe5a3990dbf627 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2019-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d34ce0df777120901bcf5670e34ade70 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1dbf9a792554f55bd5ea80d6a456ebb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6642ac2efefbf02049863870f894484 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1cd625501cf0a0f67288d957ccff905 |
| publicationDate | 2020-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I708393-B |
| titleOfInvention | Thin film transistor device and manufacturing method thereof |
| abstract | A thin film transistor device includes a substrate, a source, a drain, a material layer, a light shielding layer, and a gate. The source and the drain are disposed on the substrate. The material layer is disposed on the source and drain. The material layer includes a patterned semiconductor layer and a patterned insulation layer. The pattern semiconductor layer contacts with the source and the drain. The patterned insulation layer is disposed surrounding the patterned semiconductor layer. The light shielding layer is disposed on the patterned semiconductor layer. The light shielding layer and the patterned semiconductor layer have a same pattern. The gate is disposed on the light shielding layer. |
| priorityDate | 2019-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.