| abstract |
The present invention is an inorganic film forming composition for a multilayer photoresist process, which contains a metal compound and a solvent. The metal compound contains a plurality of metal atoms of at least one selected from the group consisting of titanium, tantalum, zirconium, and tungsten. Oxygen atoms cross-linked between a plurality of metal atoms and multidentate ligands coordinated on the metal atoms, and the absolute molecular weight of the metal compound measured by static light scattering method is 8,000 or more and 50,000 or less. The above-mentioned metal compound preferably mainly contains a structure in which two crosslinked oxygen atoms are bonded to a metal atom. |