http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I701858-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1c4c7d3bd094d293b992657a3aedf343 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-15 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K50-11 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-54 |
| filingDate | 2019-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87cf2387a7b7f9f8a57b8f744e7d2969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85c9ca5d87be7555c3eda6050bc128d6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfe37805af9850bbfb1a648e93154089 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c4c1d853c31d7838f814650401445ae |
| publicationDate | 2020-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I701858-B |
| titleOfInvention | Method for forming light-emitting diode structure |
| abstract | A light-emitting diode structure and method for fabrication thereof are disclosed herein. The method includes forming a near-infrared absorbing functional group modified first carrier transport layer over a semiconductor substrate. A near-infrared absorbing functional group modified nemitting layer is formed over the near-infrared absorbing functional group modified first carrier transport layer. A near-infrared absorbing functional group modified second carrier transport layer is formed over the near-infrared absorbing functional group modified emitting layer to form emitting stacked layers. A patterned mask is provided over the emitting stacked layers and the emitting stacked layers are exposed to light to remove a portion of the emitting stacked layers to form an emitting stacked structure. Each of the emitting stacked layers has an absorption intensity larger than 10 0.2 to light having a wavelength larger than 600nm. |
| priorityDate | 2018-10-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 63.