| abstract |
The present invention discloses a halide semiconductor memristor, comprising: a first electrode layer, an active layer and a second electrode layer, wherein the active layer comprises a first oxide semiconductor film formed on the first electrode layer, a halide semiconductor film formed on the first oxide semiconductor film, and a second oxide semiconductor film formed on the halide semiconductor film. By such arrangement, there is a first carrier energy barrier formed between the first oxide semiconductor film and the halide semiconductor film as well as a second carrier energy barrier formed between the second oxide semiconductor film and the halide semiconductor film. Moreover, experimental data have proved that, this halide semiconductor memristor is suitable for being adopted as a plurality of artificial synapses in a neuromorphic device, and exhibits many advantages of capable of being driven by a low operation voltage, having a multi-stage adjustable resistance state, and a wide dynamic range of the adjustable resistance state. |