| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7853
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-845 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2016-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccc22e7a2b4e816e2f3a2d732c963624
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01da1e2578f4e9a452bf5b397f7ad278
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ece3102073adbb1109adb69a9454016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_844adf60e60f43284edc96d864a884fb |
| publicationDate |
2020-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I694614-B |
| titleOfInvention |
Fin-shaped field effect transistor on silicon-clad insulating layer and its forming method |
| abstract |
A FinFET device on silicon on insulator (SOI) and method of forming the same, the FinFET device includes a first fin structure, a second fin structure and an insulating layer. The first fin structure and the second fin structure are disposed on a substrate. The insulating layer covers the first fin structure and the second fin structure to expose a first portion of the first fin structure and a second portion of the second fin structure, in which, the first fin structure has a first height and the second fin structure has a second height which is different from the first height, and top surfaces of the first fin structure and the second fin structure are not on the same level. |
| priorityDate |
2016-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |