| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa907cbef2178b7f30a042518be6b17b |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80896
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-80895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2225-06524 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-187
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-0657 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11551 |
| filingDate |
2019-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82ce8691f6b1ef6ce790dd273d160db9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6c270000fe35f784703f8a6869d0625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31836936303707fd24ccfdaeb0c77a48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04c673de5f7386416b3cce9af47e2e20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81aa3f8a36e66fe60a573aa11e9c91f1
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90c337ef2783edaff62cd850f88c6cc6 |
| publicationDate |
2020-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I694596-B |
| titleOfInvention |
Bonded memory element and its manufacturing method |
| abstract |
A method for forming a bonded semiconductor component includes the following steps. First, a first wafer and a second wafer are formed. The first wafer includes a functional layer over the substrate. The single crystal silicon is necessary for the substrate, and the substrate may not include single crystal silicon. The first wafer can be inverted to bond to the second wafer so as to form a bonded semiconductor device such that the substrate is on the top of the functional layer. At least a portion of the substrate is removed to form a top surface of the bonded semiconductor device. Additionally, bond pads are formed over the top surface. |
| priorityDate |
2018-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |