| abstract |
A semiconductor structure is provided. A first semiconductor device includes a first conductive layer formed over a first substrate; a first etching stop layer formed over the first conductive layer, and the first etching stop layer is in direct contact with the first conductive layer. A first bonding layer is formed over the first etching stop layer, and a first bonding via is formed through the first bonding layer and the first etching stop layer. The semiconductor structure includes a second semiconductor device. The second semiconductor device includes a second bonding layer formed over the second etching stop layer and a second bonding via formed through the second bonding layer and a second etching stop layer. A bonding structure between the first substrate and the second substrate, and the bonding structure includes the first bonding via bonded to the second bonding via. |