http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I693635-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 |
| filingDate | 2016-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ef58a1bb9ec60924e5ac12d9a312802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3f396dc96630c8892071b34702b0b963 |
| publicationDate | 2020-05-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I693635-B |
| titleOfInvention | Pattern processing method, manufacturing method of semiconductor substrate product and pre-treatment liquid for pattern structure |
| abstract | A pattern processing method, a manufacturing method of a semiconductor substrate product, and a pre-treatment liquid for a pattern structure, the pattern processing method includes at least one of polysilicon, amorphous silicon, Ge, and a low dielectric constant material having a k value of 2.4 or less The semiconductor substrate of the pattern structure is provided with a pretreatment liquid for modifying the surface of the pattern structure. |
| priorityDate | 2015-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 96.