http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I690023-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9047b16961c0aee78d7de367969339b2 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-486 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-70 |
| filingDate | 2019-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11f34214767b9f75264c0d23c821d1fe |
| publicationDate | 2020-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I690023-B |
| titleOfInvention | Semiconductor device and its manufacturing method |
| abstract | The embodiment provides a semiconductor device capable of obtaining a low and stable contact resistance at the bottom of the TSV regardless of the aspect ratio of the TSV and a manufacturing method thereof. The semiconductor device of the embodiment includes a semiconductor substrate, a metal part, and a laminated film. The semiconductor substrate has a through hole provided from the first surface to the second surface opposite to the first surface. The metal part is provided inside the through hole. The laminated film is provided between the metal portion and the inner surface of the through hole, and includes at least three layers of the first material film, the second material film, and the third material film, and the first material film and the third material film are opposite to the second material film The processing selection ratio is 10 or more, and the relative dielectric constant is 6.5 or less. |
| priorityDate | 2018-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.