| abstract |
The present invention is to provide a photoresist underlayer film for a lithography process that is excellent in flattening performance on a stepped substrate and has good filling performance in a pattern of fine holes, and thus has a feature that the wafer surface after film formation is flattened Composition.nn n n A composition for forming a photoresist underlayer film, which comprises a polymer and a solvent, and the polymer includes the following formula (1): (In formula (1), R 1 to R 4 independently represent a hydrogen atom or a methyl group, and X 1 represents a divalent organic group containing at least one arylene group that may be substituted with an alkyl group, an amine group, or a hydroxyl group ) Represents the unit structure; in formula (1) X 1 system formula (2): [In formula (2), A 1 represents phenylene or naphthyl, and A 2 represents phenylene, naphthyl, or formula (3): (In formula (3), A 3 and A 4 represent an phenylene group or a naphthyl group, and a dotted line represents a bond) an organic group represented by a dotted line represents a bond]. |