| abstract |
The embodiment provides a semiconductor device and a method for manufacturing the same, which can bond material layers on a plurality of semiconductor substrates well.nn n n The semiconductor device of the embodiment includes a first semiconductor substrate, a first insulating film, a first metal layer, a first electrode portion, a second semiconductor substrate, a second insulating film, and a second electrode portion. The first insulating film is provided on the first surface of the first semiconductor substrate, and the first groove is formed. The first metal layer covers the inner surface of the first groove. The first electrode portion is provided on the first metal layer and embedded in the first groove. The second semiconductor substrate has a second surface facing the first surface of the first semiconductor substrate. The second insulating film is provided on the second surface of the second semiconductor substrate, is bonded to the first insulating film, and the second groove is formed. The second electrode portion is inserted into the second groove and connected to the first electrode portion. The end of the first metal layer is recessed toward the first semiconductor substrate side more than the surface of the first insulating film. |